Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1999-04-12
2000-08-29
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257133, 257162, 257168, 257172, 257212, 257288, 257355, H01L 29772
Patent
active
061112895
ABSTRACT:
A semiconductor device has first and second electrical terminals. The device comprises at least one n/p or p
first junction adjacent the first terminal, and at least one of the other of a p
or n/p second junction adjacent the second terminal. It also has at least one n/p or p
junction disposed between the first and second junctions and arranged to be transverse thereto, and at least one gate terminal in contact with the p or n doped region of the first junction or the n or p doped region of the second junction.
REFERENCES:
patent: 5621229 (1997-04-01), Huang
Fuji Electric Company Ltd.
Hu Shouxiang
Thomas Tom
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