Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-06-29
1994-06-14
Limanek, Robert
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257488, 365185, H01L 27115
Patent
active
053212886
ABSTRACT:
A nonvolatile memory cell having separate regions for programming and erasing. The cells are formed in an array at a face of a semiconductor body, each cell including a source that is part of a source-column line and including a drain that is part of a drain-column line. Each cell has first and second sub-channels between source and drain. The conductivity of the first sub-channel of each cell is controlled by a field-plate, which is part of a field-plate-column line, positioned over and insulated from the first sub-channel. The conductivity of each of the second sub-channels is controlled by a floating gate formed over and insulated from the second sub-channel. Each floating gate has a first tunnelling window positioned over the adjacent source-column line and has a second tunnelling window positioned over the adjacent drain-column line. Row lines, including control gates, are positioned above and insulated from the floating gates of the cells for reading, programming and erasing the cells. The field-plate conductor permits programming of the cells through the first tunnelling window only and erasing of the cells through the second tunnelling window only, or vice versa.
REFERENCES:
patent: 4377857 (1983-03-01), Tickle
patent: 4668970 (1987-05-01), Yatsuda et al.
patent: 4947222 (1990-08-01), Gill et al.
patent: 5103273 (1992-04-01), Gill et al.
Gill Manzur
Lindgren Theodore D.
Donaldson Richard L.
Heiting Leo N.
Limanek Robert
Lindgren Theodore D.
Texas Instruments Incorporated
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