Methods of reducing corrosion of materials, methods of protectin

Details Methods of reducing corrosion of materials, methods of protectin Methods of reducing corrosion of materials, methods of protectin

1998-04-24

2000-08-29

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438687, 438692, 438693, H01L 2144, H01L 21302

Patent

active

061108308

ABSTRACT:
In one aspect, the invention includes a semiconductor processing method of reducing corrosion of a material, comprising exposing the material to a liquid solution comprising at least about 5% (by atomic percent) of an oxygen-comprising oxidant to form an oxide layer over the material. In another aspect, the invention includes a semiconductor processing method of forming an aluminum-comprising line within a layer of material, comprising: a) forming a layer of material over a semiconductive substrate; b) forming trenches within the layer of material; c) forming an aluminum-comprising layer within the trenches and over the layer of material; d) planarizing the aluminum-comprising layer to form aluminum-comprising lines within the material, the planarizing comprising abrading a portion of the aluminum-comprising layer with a first fluid, the first fluid comprising a slurry; and e) displacing the slurry with a second fluid comprising at least about 5% (by atomic percent) of ozone.

REFERENCES:
patent: 5783489 (1998-07-01), Kaufman et al.
patent: 5885134 (1999-03-01), Shibata et al.
Kaanta, Carter W., et al, "Dual Damascene: A ULSI Wiring Technology", Jun. 1991, pp. 144-152, TH-0359-0/91/0000-0144.

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