Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-11-25
2000-08-29
Bowers, Charles
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438 53, 438666, 438667, H01K 310, H01L 2170
Patent
active
061108251
ABSTRACT:
The process comprises the steps of: forming a through hole from the back of a semiconductor material body; forming a hole insulating layer of electrically isolating material laterally covering the walls of the through hole; forming a through contact region of conductive material laterally covering the hole insulating layer inside the hole and having at least one portion extending on top of the lower surface of the body; forming a protective layer covering the through contact region; and forming a connection structure extending on top of the upper surface of the body between and in electrical contact with the through contact region and the electronic component.
REFERENCES:
patent: 5322816 (1994-06-01), Pinter
patent: 5405805 (1995-04-01), Homma
patent: 5496755 (1996-03-01), Bayraktaroglu
Guldan et al., "Method for Producing Via-Connections in Semiconductor Wafers Using a Combination of Plasma and Chemical Etching," in IEEE Transactions on Electron Devices, ED-30(10):1402-1403, 1983.
Linder et al., "Fabrication Technology for Wafer Through-Hole Interconnections and Three-Dimensional Stacks of Chips and Wafers," IEEE, pp. 349, 1994.
Mastromatteo Ubaldo
Murari Bruno
Bowers Charles
Galanthay Theodore E.
Iannucci Robert
Kilday Lisa
STMicroelectronics S.r.l.
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