Method for forming a polysilicon-interconnect contact in a TFT-S

Details Method for forming a polysilicon-interconnect contact in a TFT-S Method for forming a polysilicon-interconnect contact in a TFT-S

1998-03-25

2000-08-29

Fahmy, Wael

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438166, 438586, 438652, 438674, 438656, 438677, H01L 2144, H01L 2100, H01L 2184, H01L 213205, H01L 214763

Patent

active

061108227

ABSTRACT:
A method of forming a contact in a thin film transistor with a gate electrode and an interconnect formed on a substrate, in an SRAM device comprises the following steps. Form a gate oxide layer over device. Form a split amorphous silicon layer over gate oxide layer. Form a cap layer over split amorphous silicon layer. Form a contact opening down to interconnect. Form contact metallization in opening on the surface of interconnect either as a blanket titanium layer followed by rapid thermal anneal to form a silicide and stripping unreacted titanium or by selective formation of a tungsten metal silicide in the opening. Strip cap layer from device. Form a second amorphous silicon layer on split silicon layer. Recrystallize silicon layers to form a polysilicon channel layer from amorphous silicon layers. Dope regions of polysilicon channel layer aside from a channel region above gate electrode.

REFERENCES:
patent: 4398335 (1983-08-01), Lehrer
patent: 4581623 (1986-04-01), Wang
patent: 4619038 (1986-10-01), Pintchovski
patent: 4800177 (1989-01-01), Nakamae
patent: 5059554 (1991-10-01), Spinner et al.
patent: 5336916 (1994-08-01), Chan et al.
patent: 5605853 (1997-02-01), Yoo et al.
patent: 5824574 (1998-10-01), Yamazaki et al.

Affiliated with

Also associated with

Rating

Method for forming a polysilicon-interconnect contact in a TFT-S does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming a polysilicon-interconnect contact in a TFT-S, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a polysilicon-interconnect contact in a TFT-S will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1249413