Method for manufacturing VLSI semiconductor device

Details Method for manufacturing VLSI semiconductor device Method for manufacturing VLSI semiconductor device

1992-10-05

1994-06-14

Kunemund, Robert

Fishing, trapping, and vermin destroying

437 52, 437919, H01L 2170, H01L 2700

Patent

active

053209761

ABSTRACT:
A method for manufacturing a VLSI semiconductor memory device, in which a cell transistor is formed in the cell array section of a semiconductor substrate, successively, a cell capacitor. Then, a transistor is formed in the periphery circuit section of the substrate. Therefore, access transistors of the cell array section are formed independently from transistors of the peripheral circuit section, optimizing transistor performance.

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patent: 5079613 (1992-01-01), Sawada et al.
Wolf et al. "Silicon Processing for the VLSI Era", vol. 1, Lattice Press, 1986, pp. 182-185.

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