Semiconductor device comprising an FPGA

Details Semiconductor device comprising an FPGA Semiconductor device comprising an FPGA

1997-05-15

1999-01-19

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257324, 257325, 257326, 257488, 257490, 257630, H01L 2972

Patent

active

058616500

ABSTRACT:
The semiconductor device includes a silicon substrate, field effect transistors, a flash memory and a separating portion. A plurality of field effect transistors are formed on semiconductor substrate. A flash memory is formed on semiconductor substrate. Separating portion includes a separation electrode. Separating portion electrically separates the plurality of field effect transistors from each other. Separating portion is formed insulated on silicon substrate. Flash memory includes a floating gate electrode and a control gate electrode. Floating gate electrode is formed insulated on silicon substrate. Control gate electrode is formed insulated on floating gate electrode. Separation electrode and floating gate electrode have approximately the same thickness.

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