VLSI capacitors and high Q VLSI inductors using metal-filled via

Details VLSI capacitors and high Q VLSI inductors using metal-filled via VLSI capacitors and high Q VLSI inductors using metal-filled via

1996-10-02

1999-01-19

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257300, 257531, 257532, H01L 2900, H01L 2702

Patent

active

058616470

ABSTRACT:
Disclosed are methods of making inductors and capacitors, comprising filling a via in a dielectric disposed between two metal layers with a metal plug. The plug comprises tungsten, aluminum or copper and extends the length of the metal layers. The plug connects the two metal layers to form the inductor. Two plugs can be formed so as to connect the two metal layers so as to form a parallel plate capacitor.

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P.R. Gray et al., "Future Directions in Silicon ICs for RF Personal Communications", Electrical Engineering & Computer Sciences, University of California, Berkeley.

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