Insulated gate bipolar transistor

Details Insulated gate bipolar transistor Insulated gate bipolar transistor

1996-12-05

1999-01-19

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257341, H01L 2974

Patent

active

058616381

ABSTRACT:
An insulated gate bipolar transistor according to the present invention has a first and a second emitter regions. A diffusion region of the first conductive type is formed in the first emitter region of the second conductive type. The second emitter region has a region having a high concentration compared with the remaining portion of the second emitter region. The high concentration region is adjacent to the diffusion region and positioned towards the center of a first conductive type well. In addition, the junction depth of the high concentration region is similar to the diffusion region.

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