Semiconductor integrated circuit device

Details Semiconductor integrated circuit device Semiconductor integrated circuit device

1995-08-13

1996-10-15

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257296, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

055656994

ABSTRACT:
A semiconductor integrated circuit device can prevent a crack in a silicon nitride layer acting as a dielectric thin film of a capacitance element. A lower electrode of a gate polycrystalline silicon is formed on a LOCOS oxide film. A BPSG film is formed as an interlayer insulating film. An opening as well as first and second contact holes surrounding the opening are formed. A silicon nitride film is deposited on the opening and then an upper electrode is formed on the silicon nitride film. A take-out electrode extending out of the first contact hole is in contact with the lower electrode. The first and second contact holes separate the BPSG film into a first portion surrounding the silicon nitride film and a second portion outside the first portion.

REFERENCES:
patent: 4638400 (1987-01-01), Brown et al.
patent: 5083184 (1992-01-01), Eguchi
International Electron Devices Meeting Technical Digest, Dec. 1, 1985, D. Brown et al., "Advanced Analog CMOS Technology", pp. 260-263.

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