Process for CVD deposition of tungsten layer on semiconductor wa

Details Process for CVD deposition of tungsten layer on semiconductor wa Process for CVD deposition of tungsten layer on semiconductor wa

1989-08-25

1991-07-02

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437195, 437190, 148DIG25, H01L 21285

Patent

active

050285653

ABSTRACT:
An improved process is disclosed for the deposition of a layer of tungsten on a semiconductor wafer in a vacuum chamber wherein the improvements comprise depositing tungsten on the semiconductor wafer in the presence of nitrogen gas to improve the reflectivity of the surface of the resulting layer of tungsten; maintaining the vacuum chamber at a pressure of from about 20 to 760 Torr to improve the deposition rate of the tungsten, as well as to improve the reflectivity of the tungsten surface; and, when needed, the additional step of forming a nucleation layer on the semiconductor layer prior to the step of depositing tungsten on the semiconductor wafer to improve the uniformity of the deposited tungsten layer.

REFERENCES:
patent: 4785962 (1988-11-01), Toshima
patent: 4800105 (1989-01-01), Nakayama et al.
Toshi et al, "The Role of Process Parameters of Selective W Deposited by SiH.sub.4, H.sub.2, and WF.sub.6 Chemistry in Terms of Shallow Junction Leakages", Materials Research Society, pp. 85-92, 1989.
Broadbent et al, "Selective Tungsten Processing by LPCUD", Solid State Tech., pp. 51-59 12/85.
Morosami et al, "Kinetics and Properties of CVD Tungsten Film on hion Substrates", pp. 181-203.
Broadbent et al., "Selective Low Pressure CVD of Tungsten", Solid State Science and Tech., vol. 131, No. 6, 6/84, pp. 1427-1433.
Lifshntz et al., "Shallow Shieded Diodes with LPCND Tungsten Plug", Materials Research SOciety 1988, pp. 225-229.

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