Method for fabricating an aligned opening using a photoresist po

Details Method for fabricating an aligned opening using a photoresist po Method for fabricating an aligned opening using a photoresist po

1996-08-07

1999-01-19

Everhart, Caridad

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438637, 438696, 438947, 438700, H01L 21465

Patent

active

058613439

ABSTRACT:
The present invention relates to a method of forming a self-contact hole on a semiconductor substrate. A polysilicon layer is formed over a substrate. A photoresist is patterned on the polysilicon layer. Then an etching is performed to etch the polysilicon layer, and during the etch polymers are formed on the side wall the polysilicon layer and the photoresist. Using the polymer side wall spacer as a mask to formed an opening in the polysilicon layer. Subsequently, the photoresist and side wall spacer are removed. A opening which is smaller than the conventional one is formed, that will increase the accuracy of a contact hole alignment.

REFERENCES:
patent: 5525552 (1996-06-01), Huang
patent: 5563098 (1996-10-01), Kuo et al.
patent: 5719089 (1998-02-01), Cherng et al.
Sorab K. Ghandki, VLSI Fabrication Principles, Wiley & Sons (1983) p. 544.

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