Method of forming a polycide film

Details Method of forming a polycide film Method of forming a polycide film

1996-02-15

1999-01-19

Quach, T. N.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438594, 438653, 438655, 438657, H01L 21283, H01L 21336

Patent

active

058613404

ABSTRACT:
A method of forming a polycide thin film. First, a silicon layer is formed. Next, a thin barrier layer is formed on the first silicon layer. A second silicon layer is then formed on the barrier layer. Next, a metal layer is formed on the second silicon layer. The metal layer and the second silicon layer are then reacted together to form a silicide.

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Hu, C., et al., Diffusion Barrier Studies for Cu, Jun. 9-10, 1986, VMIC Conf., pp. 181-187.
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Ghandhi, S. K., VLSI Fabrication, John Wiley & Sons, 1983, pp. 371-373.
Sheng et al., Coss-Sectional Transmission . . . in Materials and Process Characterization for VLSI 1988, Zony et al., Editors, World Scientific, pp. 474-475.

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