Recessed isolation with double oxidation

Details Recessed isolation with double oxidation Recessed isolation with double oxidation

1995-10-27

1999-01-19

Fourson, George R.

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

H01L 2176

Patent

active

058613390

ABSTRACT:
A method provides a recessed isolation is provided in a semiconductor substrate by (a) growing a first field oxide, (b) selectively removing portions of the first field oxide to leave recessed areas in the semiconductor substrate, and (c) growing a second field oxide from the recessed areas in a controlled manner, so that the surface of the semiconductor substrate is substantially planar. In one embodiment, nitride spacers are provided to limit lateral encroachment by the second field oxide from encroaching the active areas of the semiconductor substrate.

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