Method for epitaxial growth from the vapor phase of semiconducto

Details Method for epitaxial growth from the vapor phase of semiconducto Method for epitaxial growth from the vapor phase of semiconducto

1988-12-06

1992-04-28

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156610, 156613, 156614, 118724, C30B 2306

Patent

active

051085402

ABSTRACT:
A method for carrying out epitaxial growth from the vapor phase of layers of semiconductor materials on semiconductor substrates, in a chamber being mainly constituted by a tube containing a susceptor for the substrate, in which tube gaseous components are circulated from one end to the other at a pressure and a temperature suitable to obtain the epitaxial growth of the monocrystalline layers on the substrate. The temperature of the wall of the chamber opposite to the susceptor, this wall being designated as the ceiling of the chamber is regulated, to produce variations of the deposition profile of the epitaxial layer formed on the substrate.
Application: manufacture of discrete components of III-V semiconductor materials.

REFERENCES:
patent: 3391017 (1968-07-01), Bolger et al.
patent: 3929556 (1975-12-01), Pandey
patent: 4518455 (1985-05-01), Muething
Okamoto et al., "Extremely Uniform Growth of GaAs and GaAlAs by Low Pressure Metalorganic Chemical Vapor Deposition on Three-Inch GaAs Substrates", J. Crys. Growth 70 (1984) 140-144 .
Eversteyn et al., "A Stagnant Layer Model . . .", J. Electrochem. Soc., vol. 117, No. 7, 1970, pp. 925-931.
Fujii et al., "A Quantitive Calculation . . .", J. Electrochem. Soc., vol. 119, No. 8, 1972, pp. 1106-1113.
Berkman et al., "Heteroepitaxial Semiconductors for Electronic Devices", Editors: Cullen et al., Springer-Verlag, 1978, Chapter 7.

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