Coating apparatus – Gas or vapor deposition
Patent
1997-08-15
2000-08-29
Kiliman, Leszek
Coating apparatus
Gas or vapor deposition
4271263, 4272481, 4272553, 4272552, 427314, 4274191, 4274192, 4272551, C23C 1600
Patent
active
061102830
ABSTRACT:
A chemical vapor deposition apparatus to reduce generation of contaminants such as residues within the apparatus can be obtained. The chemical vapor deposition apparatus includes a CVD source container, a vaporizer and reaction unit. The vaporizer has a nozzle attached thereto. The nozzle has a tip portion and a thick portion. The reaction unit includes a mixing unit. The mixing unit includes an oxidizer supply pipe as well as a heating portion having a helical side groove and heating means. Reaction unit further includes a reaction chamber surrounded by a wall surface. The inside of the wall surface is covered with an inactive cover layer, and the wall surface is heated to a temperature range of 300-500.degree. C.
REFERENCES:
patent: 5204314 (1993-04-01), Kirlin et al.
patent: 5418388 (1995-05-01), Okudaira et al.
"Surface Morrphologies and Electrical Properties of (BaSr)TiO Films . . . " Kawahara, et al, Jpn. J. Appl. Phys. vol. 34 (1995) pt. 1 No. 9B, Set. 1995 pp. 5077-5082.
"SrTiO Thin Films By MOCVD For 1 Gbit DRAM Application", Lesaicherre et al., Integrated Ferroelectrics, 1995, vol. 8, pp. 201-225.
MOCVD of BASrtiO DOR ULSI DRAMS, Kirlin et al., Integrated Ferroelectrics, 1995, vol. 7, pp. 307-318.
Horikawa Tsuyoshi
Kawahara Takaaki
Tarutani Masayoshi
Yamamuka Mikio
Kiliman Leszek
Mitsubishi Denki & Kabushiki Kaisha
LandOfFree
Chemical vapor deposition apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Chemical vapor deposition apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Chemical vapor deposition apparatus will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1245405