Method of producing single-crystal silicon carbide

Details Method of producing single-crystal silicon carbide Method of producing single-crystal silicon carbide

1998-03-30

2000-08-29

Hiteshew, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

Including change in a growth-influencing parameter

117109, 117915, C30B 1700

Patent

active

061102792

ABSTRACT:
A (111) cubic silicon carbide single-crystal layer is formed on a (111) silicon wafer, and then the silicon wafer is removed. Thus prepared (111) cubic silicon carbide single-crystal layer is disposed in a graphite crucible to function as a seed crystal. Silicon carbide source material powder is also held in the graphite crucible and sublimated in an atmosphere including inert gas, while controlling a temperature of the (111) cubic silicon carbide single-crystal layer to be lower than a temperature of the silicon carbide source material powder. As a result, a (0001) .alpha.-type silicon carbide single-crystal layer can be formed on the (111) cubic silicon carbide single-crystal layer with a large diameter and high quality at low cost.

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Single Crystal Growth of Hexagonal Sic on Cubic Sic by Intentional Polytype Control, Woo Sik Yoo et al (Also see Appln. p. 5), pp. 278-283.

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