Method and device for detecting the end point of plasma process

Etching a substrate: processes – Gas phase etching of substrate – With measuring – testing – or inspecting

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156345, 356 72, 356316, G01N 2100

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active

055651143

ABSTRACT:
This invention provides an end point detection method including the steps of sequentially detecting, when a process using a plasma is performed for an object to be processed, emission spectra in a specific wavelength band of an active species in the plasma by using a photodetector, calculating sum average values of emission intensities of the emission spectra, calculating the ratio or the difference between the sum average values to obtain a calculated value, and determining a point at which the calculated value exceeds a predetermined reference value as an end point of the process.

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