Remote plasma source for chamber cleaning

Details Remote plasma source for chamber cleaning Remote plasma source for chamber cleaning

1997-05-29

2000-08-29

Nguyen, Nam

Coating apparatus

Gas or vapor deposition

With treating means

118723R, 118723I, 20429833, C23C 1600, C23C 1434

Patent

active

061092061

ABSTRACT:
The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers. The tool of the present invention includes: a dual RF zone inductively coupled plasma source; a dual zone gas distribution system; temperature controlled surfaces within the tool; a symmetrically shaped turbomolecular pumped chamber body; a dual cooling zone electrostatic chuck; an all ceramic/aluminum alloy chamber; and a remote plasma chamber cleaning system.

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U.S. application No. 08/865,018 Redeker et al, filed May 29, 1997.
U.S. application No. 08/712,724 Ishikawa, filed Sep. 11, 1996.
U.S. application No. 08/574,839 Ishikawa, filed Dec. 19, 1995.
U.S. application No. 08/500,493 van Os, et al, filed Jul. 10, 1995.

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