Process and material for manufacturing thin film integrated circ

Details Process and material for manufacturing thin film integrated circ Process and material for manufacturing thin film integrated circ

1976-08-10

1977-06-07

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

252 791, 156345, 156659, B29C 1708

Patent

active

040281558

ABSTRACT:
A process step for use in the manufacture of thin film integrated circuits, to enable, in one process, the removal of all the photoresist material from underlying metallic films without concomitant degradation of the metallic surface and in another process, preferential etching of silicon nitrides and oxides without significant simultaneous etching of single crystal silicon. The material is exposed to a low pressure (few torr) rf generated "cold" plasma, where the plasma is a homogeneous gaseous mixture of oxygen, a halogen containing compound and a noble gas.

REFERENCES:
patent: 3615956 (1971-10-01), Irving et al.
patent: 3880684 (1975-04-01), Abe
patent: 3908041 (1975-09-01), Engl et al.
patent: 3923568 (1975-12-01), Bersin

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