Non-volatile semiconductor memory device with thin film transist

Details Non-volatile semiconductor memory device with thin film transist Non-volatile semiconductor memory device with thin film transist

1995-09-27

1997-11-11

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257326, H01L 29788

Patent

active

056867492

ABSTRACT:
In a non-volatile semiconductor memory device, predetermined number of memory cells each comprising a non-volatile semiconductor memory element of a floating gate type transistor are connected to a first bit line in parallel, and the first bit line is connected to one of the source and drain regions of each thin film transistor while the other of the source and drain regions is connected to a second bit line. The thin film transistor and the floating gate electrode of the floating gate type transistor are formed in the same semiconductor thin film. The thin film transistor is a selection transistor for selectively reading out data stored in said memory cells, and is a sector erasing transistor for selectively erasing data stored in the memory cells.

REFERENCES:
patent: 5267195 (1993-11-01), Kodama
patent: 5321286 (1994-06-01), Koyama et al.
patent: 5493139 (1996-02-01), Akiyama et al.

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