Nonvolatile semiconductor memory device

Details Nonvolatile semiconductor memory device Nonvolatile semiconductor memory device

1994-12-15

1996-05-07

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257390, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

055148964

ABSTRACT:
A gate insulating film is provided on the upper surface of an N-type silicon substrate. A floating gate is provided on the gate insulating film, an ONO film is provided on the floating gate, and a control gate is provided on the ONO film. Two diffusion layers for a source and a drain, respectively, are formed by using the control gate as a mask, in self-alignment, in the upper surface of the N-type silicon substrate. A damage layer is formed in a region of the semiconductor substrate, which is located beneath the first gate. The damage layer has an impurity concentration which is the highest at a point located in a depletion layer formed when a data-writing voltage is applied to the memory device and which is located outside a depletion layer formed when a data-reading voltage is applied to the memory device.

REFERENCES:
patent: 3969744 (1976-07-01), Nicholas et al.
patent: 5291040 (1994-03-01), Oppermann et al.
Muller et al, Device Electronics for IC's, pp. 452-453, 1986.

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