Method of selective etching of materials utilizing masks of bina

Details Method of selective etching of materials utilizing masks of bina Method of selective etching of materials utilizing masks of bina

1976-04-12

1977-08-09

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156663, 156667, 156904, 252 793, 252 795, H01L 21312, B44C 122, C23E 100

Patent

active

040408930

ABSTRACT:
A method of etching a layer of material on the surface of a substrate of silicon dioxide utilizes an etch mask constituted of a binary silicate glass. The binary silicate glass is removed subsequent to the etching of the layer without affecting the substrate of silicon dioxide.

REFERENCES:
patent: 3657030 (1972-04-01), Porter
patent: 3738880 (1973-06-01), Laker
patent: 3784424 (1974-01-01), Chang
patent: 3811975 (1974-05-01), Lierop et al.
IBM Technical Disclosure Bulletin, vol. 14, No. 11, Apr. 1972, Contact Hole Etching for P-Channel Silicon Gate FETS by C. A. Barile, p. 3331.

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