Method for forming aluminum contacts

Details Method for forming aluminum contacts Method for forming aluminum contacts

1995-11-27

1997-11-11

Weisstuch, Aaron

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

20419217, 437192, 437194, C23C 1434, A01L 2144

Patent

active

056859600

ABSTRACT:
A process for making an aluminum contact comprising sputter depositing in a contact opening in a semiconductor substrate a first layer of titanium, forming a thin layer of titanium oxide thereover, sputter depositing a titanium nitride layer, smoothing the titanium nitride layer in an argon plasma, and sputter depositing an aluminum contact over the treated titanium nitride layer. The argon plasma treatment smooths the surface of the titanium nitride layer and improves the wettability between this layer and aluminum.

REFERENCES:
patent: 5378660 (1995-01-01), Ngan et al.
Park et al, "A Novel Al-Reflow Process Using Surface Modification by the ECR Plasma Treatment and its Application to the 256Mbit DRAM", IEDM Technical Digest 1994, San Francisco, CA Dec. 11-14, 1994, pp. 5.4.1-5.4.4 .

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