Methods of making high voltage GaN-AlN based semiconductor devic

Details Methods of making high voltage GaN-AlN based semiconductor devic Methods of making high voltage GaN-AlN based semiconductor devic

1997-11-12

1999-11-23

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 76, 257615, H01L 2976

Patent

active

059905310

ABSTRACT:
The present invention is directed to a technique for manufacturing semiconductor devices in which p type GaN is formed on a substrate and semi-insulating AlN is formed on the P type GaN with n type GaN formed on the p type GaN and partially below the AlN. Highly efficient high power and high voltage semiconductor devices are formed through this technique having better or similar properties to silicon type semiconductors.

REFERENCES:
patent: 5382822 (1995-01-01), Stein
patent: 5650361 (1997-07-01), Radhakrishnan
patent: 5900648 (1999-05-01), Harris et al.
patent: 5915164 (1999-06-01), Taskar et al.

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