Semiconductor memory device containing nitrogen in a gate oxide

Details Semiconductor memory device containing nitrogen in a gate oxide Semiconductor memory device containing nitrogen in a gate oxide

1997-08-27

1999-11-23

Abraham, Fetsum

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257344, 257346, 257371, 257408, 257410, 257411, 257900, H01L 2978

Patent

active

059905174

ABSTRACT:
A semiconductor device includes a substrate, a gate oxide film formed on the substrate, a gate electrode provided on the gate oxide film, first and second diffusion regions formed in the substrate at both lateral sides of the gate electrode. The gate electrode includes a first region located immediately underneath the gate electrode and a second region adjacent to the first region, wherein the first and second regions contain N atoms with respective concentrations such that the second region contains N with a higher concentration as compared with the first region.

REFERENCES:
patent: 5554876 (1996-09-01), Kusunoki et al.
patent: 5773325 (1998-06-01), Teramoto
patent: 5808348 (1998-09-01), Ito et al.

Affiliated with

Also associated with

Rating

Semiconductor memory device containing nitrogen in a gate oxide does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device containing nitrogen in a gate oxide , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device containing nitrogen in a gate oxide will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1224639