Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-07-08
1999-11-23
Chaudhuri, Olik
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257296, 257303, 257306, H01L 2976, H01L 2994, H01L 31062, H01L 31113
Patent
active
059905077
ABSTRACT:
A method of manufacturing a semiconductor apparatus comprises the steps of forming, on a surface of a semiconductor substrate, an MIS transistor including a drain region and a source region each formed of an impurity diffusion region, forming an insulation film on the semiconductor substrate after the MIS transistor has been formed, selectively forming contact holes in the insulation film, embedding, into the contact hole, a capacitor contact plug having a lower end which is in contact with one of the drain region and the source region of the MIS transistor, forming a ferroelectric capacitor having a lower electrode, a ferroelectric film and an upper electrode on the insulation film after the capacitor contact plug has been formed, and forming an electric wire for establishing a connection between the upper electrode of the ferroelectric capacitor and an upper surface of the capacitor contact plug.
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Hidaka Osamu
Kanaya Hiroyuki
Kunishima Iwao
Mochizuki Hiroshi
Okuwada Kumi
Cao Phat X.
Chaudhuri Olik
Kabushiki Kaisha Toshiba
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