Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-12-05
1995-11-14
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257488, 257489, 257490, 257572, 257577, H01L 2972, H01L 2940
Patent
active
054669596
ABSTRACT:
A semiconductor device for influencing the breakdown voltage of a transistor with a surface electrode arranged over a space charge region, separated from the same by an oxide layer. The surface electrode is at a potential, as determined by a voltage divider, between the potentials of the base and collector of the transistor. The surface electrode includes two electrode plates insulated from one another, with the first electrode plate extending over a junction between a highly doped n.sup.+ collector region and a lightly doped n.sup.- collector region, and a junction between the lightly doped n.sup.- collector region and a p-type base region. The second electrode plate is bonded partly over the oxide layer and partly with the highly doped n.sup.+ collector region.
REFERENCES:
patent: 4618875 (1986-10-01), Flohrs
patent: 4916494 (1990-04-01), Flohrs et al.
No Author, "New Products Review for Wescon," Texas Instruments, Texas, 1964, p. 11.
Camenzind et al., "IC's Break Through The Voltage Barrier," Electronics, Mar. 31, 1969, pp. 90-94.
Goerlach Alfred
Michel Hartmut
Mindl Anton
Mintel William
Robert & Bosch GmbH
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