Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-04-23
1999-11-23
Breneman, Bruce
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438738, 216 18, 216 47, 216 72, H01L 2100
Patent
active
059900032
ABSTRACT:
There is provided a method of fabricating a semiconductor, including the steps, in sequence, of (a) forming a first interlayer insulating film over a semiconductor substrate, (b) forming an electrically conductive contact hole in the first interlayer insulating film, (c) forming a second interlayer insulating film over the first interlayer insulating film, (d) forming a photosensitive organic film over the second interlayer insulating film, (e) forming a via-hole passing through the photosensitive organic film and the second interlayer insulating film, the via-hole being in vertical alignment with the contact hole, (f) forming a film so that the film covers the photosensitive organic film therewith and fills the via-hole therewith, (g) exposing the film to plasma so that a portion of the film lying over the photosensitive organic film is removed, (h) removing both the photosensitive organic film and the film remaining in the via-hole, and (i) forming a wire above the via-hole. In accordance with the above mentioned method, the cured layer formed on the photosensitive organic film is removed by being exposed to plasma in oxygen atmosphere with the via-hole being filled with the film. Thus, the second interlayer insulating film defining an inner wall of the via-hole is not exposed directly to oxygen plasma, and hence is not etched by the plasma. As a result, it is possible to prevent that the via-hole has a greater side length than a designed side length.
REFERENCES:
patent: 4806453 (1989-02-01), Vidusek et al.
patent: 4814041 (1989-03-01), Auda
patent: 5679269 (1997-10-01), Cohen et al.
patent: 5827780 (1998-10-01), Hsia et al.
patent: 5833817 (1998-11-01), Tsai et al.
S. M. Irving; "A Plasma Oxidation Process for Removing Photoresist Films"; Solid State Technology, Jun. 1971, pp. 47-51.
Japanese Office Action dated Mar. 24, 1998 with English language translation of Japanese Examiner's comments.
Breneman Bruce
NEC Corporation
Powell Alva C.
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