Method of forming a semiconductor device having a critical path

Details Method of forming a semiconductor device having a critical path Method of forming a semiconductor device having a critical path

1997-11-24

1999-11-23

Fahmy, Wael M.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438638, 438666, 438675, H01L 21283

Patent

active

059900016

ABSTRACT:
Disclosed is a semiconductor device, which has: a wiring corresponding to a critical path, a wiring delay time of which determines an operating speed of an entire circuit, and a wiring corresponding to other than the critical path. The critical path wiring and the other wiring are formed on the same wiring layer, wherein a thickness of at least a part of the critical path wiring is greater than that of the other wiring.

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