Method for producing contact structures

Details Method for producing contact structures Method for producing contact structures

1998-12-29

1999-11-23

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438670, 438676, 257775, H01L 2144

Patent

active

059899948

ABSTRACT:
A production method for forming contact structures on a planar surface of a substrate. The production method includes the steps of: (a) forming a sacrificial layer on a surface of a silicon substrate, (b) forming an conductive layer made of electric conductive material on the sacrificial layer, (c) forming a photoresist layer on the conductive layer, (d) aligning a photo mask over the photoresist layer and exposing the photoresist layer with ultraviolet light through the photo mask where the photo mask including an image of the contact structures, (e) developing the image on the photoresist layer which has openings on the surface of the photoresist layer, (f) forming the contact structures made of electric conductive material in the openings by an electroplating process, (g) stripping the photoresist layer, (h) placing an adhesive tape on the contact structure, and (i) removing the sacrificial layer and the conductive layer by an etching process to separate the contact structures on the adhesive tape from the silicon substrate.

REFERENCES:
patent: 5127998 (1992-07-01), Cole
patent: 5230965 (1993-07-01), Cole
patent: 5829128 (1998-11-01), Eldridge
patent: 5832601 (1998-11-01), Eldridge
patent: 5846879 (1998-12-01), Winnerl
patent: 5878486 (1999-04-01), Eldridge
patent: 5884398 (1999-04-01), Eldridge
patent: 5897326 (1999-04-01), Eldridge

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