Method of fabricating a buried zener diode simultaneously with o

Details Method of fabricating a buried zener diode simultaneously with o Method of fabricating a buried zener diode simultaneously with o

1991-04-26

1993-01-12

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 28, 437 33, 437154, 437904, H01L 21265, H01R 2122

Patent

active

051790300

ABSTRACT:
A method for fabricating a buried zener diode concurrently with other semiconductor devices on a large scale semiconductor wafer includes utilizing a composite mask to define one or more stable buried zener diodes, one or more additional semiconductor devices, and a number of isolation regions. After applying a screen oxide over selected portions of the semiconductor wafer, subsequent ion implantation steps and additional masking steps concurrently form the stable buried zener diode along with additional and different semiconductor devices utilizing conventional ion implant bi-polar processing techniques.

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