Process for the formation of a functional deposited film by hydr

Details Process for the formation of a functional deposited film by hydr Process for the formation of a functional deposited film by hydr

1992-05-08

1993-01-12

Beck, Shrive

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

4272552, B05D 306

Patent

active

051789051

ABSTRACT:
A process for forming a functional deposited film which comprises: introducing a precursor composed mainly of Group IV elements to be constituents for a deposited film to be formed into a substantially enclosed film-forming space being kept at 0.1 to 50 mTorr into which hydrogen gas plasma is drawn in a sheet-like state and a substrate is positioned parallel to said sheet-like hydrogen gas plasma, and exhausting the gases in the film-forming space in the direction perpendicular to the sheet-like hydrogen gas plasma and the substrate, said precursor being generated in an precursor generation space situated separately from said film-forming space, said sheet-like hydrogen gas plasma being formed such that a distance (L) of 5 to 50 mm is established between the boundary thereof and the surface of the substrate, said precursor being introduced through gas feed means positioned substantially in said distance (L).

REFERENCES:
patent: 4717586 (1988-01-01), Ishihara et al.
patent: 4772570 (1988-09-01), Kanai et al.
patent: 4818564 (1989-04-01), Ishihara et al.
patent: 4842945 (1989-06-01), Ito et al.
patent: 4898118 (1990-02-01), Murakami et al.
patent: 4900694 (1990-02-01), Nakagama

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