Semiconductor device with high breakdown voltage island region

Details Semiconductor device with high breakdown voltage island region Semiconductor device with high breakdown voltage island region

1997-05-09

1999-03-30

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257343, 257369, H01L 2976, H01L 2994, H01L 31062

Patent

active

058893105

ABSTRACT:
A high breakdown voltage pch-MOSFET having a breakdown voltage of 150V or more and a control element controlling the same are formed in a common n.sup.- epitaxial layer. Only an n-type region of n.sup.- epitaxial layer is distributed at a region located between the high breakdown voltage pch-MOSFET and the control element and extending along the substrate surface. A semiconductor device thus formed achieves a good throughput and reduces a required chip area.

REFERENCES:
patent: 5072287 (1991-12-01), Nakagawa et al.
patent: 5428241 (1995-06-01), Terashima
"A Versatile 250/300-VIC Process for Analog and Switching Applications", A.W. Ludikhuize, IEEE Transactions of Electron Devices, vol. ED-33, No. 12, Dec. 1986, pp. 2008-2015.

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