Multilayer floating gate field effect transistor structure for u

Details Multilayer floating gate field effect transistor structure for u Multilayer floating gate field effect transistor structure for u

1997-04-21

1999-03-30

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257316, 257324, 257350, 257347, 257351, 257758, 257760, H01L 29788, H01L 29792

Patent

active

058893024

ABSTRACT:
A floating gate field effect transistor (FET) is provided on a semiconductor-on-insulator (SOI) or silicon-on-insulator structure. The silicon substrate is etched to form stepped structures upon which the transistors are formed. Layers of silicon substrate can be stacked upon each other to form a multi-layer system. Interlayer vias can be provided to connect each layer of the two-layer structure.

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Patent Application for "Quadruple Gate Field Effect Transistor Structure for Use in Integrated Circuit Devices" Inventor Yowjuang W. Liu, Attorney Docket No. 60048-189, Filed Apr. 18, 1997, Serial No. 08/844,146.
Patent Application for "Multilayer Quadruple Gate Field Effect Transistor Structure for Use in Integrated Circuit Devices" Inventor Yowjuang W. Liu, Attorney Docket No. 60048-190, Filed Apr. 18, 1997, Serial No. 08/837,557.

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