Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-02-21
1999-03-30
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257532, H01L 2976
Patent
active
058892990
ABSTRACT:
A thin film capacitor including a first electrode having on its surface a (100) face of cubic system or a (001) face of tetragonal system, a dielectric thin film epitaxially grown on the first electrode and exhibiting a crystal structure which inherently belongs to a perovskite structure of cubic system, and a second electrode formed on the dielectric thin film. Further, the dielectric thin film meets the following relationship V/V.sub.0 .gtoreq.1.01 where a unit lattice volume of true perovskite crystal structure belonging to the cubic system (lattice constant a.sub.0) is represented by V.sub.0 =a.sub.0.sup.3, and a unit lattice volume (lattice constant a=b.noteq.c) which is strained toward a tetragonal system after the epitaxial growth is represented by V=a.sup.2 c, and also meets the following relationship c/a.gtoreq.1.01 where c/a represents a ratio between a lattice constant "c" in the direction thicknesswise of the film and a lattice constant "a" in the direction parallel with a plane of the film.
REFERENCES:
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patent: 5760432 (1998-06-01), Abe et al.
Song-Tae Lee, et al., "Epitaxial Growth of BaTiO.sub.3 Thin Films and Thier Internal Stresses", Jpn. J. Appl. Phys., vol. 34, No. 9B, Sep. 1995, pp. 5168-5171.
Y. Yano, et al., "Epitaxial Growth and Dielectric Properties of BaTiO.sub.3 Films on Pt Electrodes by Reactive Evaporation", J. Appl. Phys., vol. 76, No. 12, Dec. 15, 1994, pp. 7833-7838.
Kazuhide Abe, et al., "Ferroelectric Properties in Epitaxially Grown Ba.sub.x Sr.sub.1-x TiO.sub.3 Thin Films", J. Appl. Phys., vol. 77, No. 12, Jun. 15, 1995, pp. 6461-6465.
Kazuhide Abe, et al., "Epitaxial Growth and Dielectric Properties of (Ba.sub.0.24 Sr.sub.0.76)TiO.sub.3 Thin Film", Jpn. J. Appl. Phys., vol. 33, No. 9b, Sep. 1994, pp. 5297-5300.
Abe Kazuhide
Fukushima Noburu
Izuha Mitsuaki
Kawakubo Takashi
Komatsu Shuichi
Carroll J.
Kabushiki Kaisha Toshiba
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