Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-06-18
1999-03-30
Niebling, John F.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438640, H01K 214763
Patent
active
058889027
ABSTRACT:
Multilayered interconnection of a semiconductor device and method for forming the same, which can reduce the contact resistance and improve the reliability of a semiconductor device and is suitable for high density integration of semiconductor devices, including a substrate, an underside interconnection layer formed on the substrate, an interlayer insulation film formed on the underside interconnection layer, an upperside interconnection layer formed on the interlayer insulation film, a contact hole formed extended both in the upperside interconnection layer and the interlayer insulation film, and a plug formed in the contact hole so that the plug is in contact with the underside interconnection layer at an upper part thereof and the upperside interconnection layer at sides thereof.
A surface of each of the sides in the contact hole where the upperside interconnection layer and the plug are in contact is rectangular of which area is related both to width of the contact hole and thickness of the upperside interconnection layer. A surface of each of the sides in the contact hole where the upperside interconnection layer and the plug are in contact is trapezoidal, with a side of the trapezoid at an upper surface of the upperside interconnection layer being greater than a side of the trapezoid at a lower surface of the upperside interconnection layer, of which area is related to a dimension of the contact hole at the upper surface and the lower surface of the upperside interconnection layer, and the thickness of the upperside interconnection layer.
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Lebentritt Michael S.
LG Semicon Co., Ltd
Niebling John F.
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