Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-04-02
1999-03-30
Dutton, Brian
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438634, 438637, 438672, 438687, 438688, H01L 214763, H01L 2144
Patent
active
058888993
ABSTRACT:
An embodiment of the instant invention is a method of forming a conductive structure over a semiconductor wafer, the method comprising the steps of: forming a first aluminum layer (14, 24) of a thickness; forming a conductive layer (18,28) of a material which is not readily etched by aluminum-etching etchants on the first aluminum layer, the conuctive layer having a thickness; forming a second aluminum layer (20, 30) on the conductive layer, the second aluminum layer having a thickness; patterning and etching the second aluminum layer thereby exposing a portion of the conductive layer; etching the exposed portion of the conductive layer thereby exposing a portion of the first aluminum layer; etching the exposed portion of the first aluminum layer; subjecting semiconductor wafer to a thermal step thereby diffusing the material in the conductive layer from the conductive layer into the first and second aluminum layers; and wherein the thickness of the conductive layer is much thinner than the thicknesses of the first and second aluminum layers. A plurality of aluminum/conductive/aluminum layers may be formed prior to patterning and etching. Preferably, the material of the conductive layer is comprised of: copper, scandium, tantalum, or vanadium, and the conductive layer is approximately 10 to 30 .ANG. thick and comprised of copper. More preferably, the copper layer is approximately 20 .ANG. thick. Preferably, the first aluminum layer is approximately 1500 to 3000 .ANG. thick, and the second aluminum layer is approximately 1500 to 3000 .ANG. thick.
REFERENCES:
patent: 3413157 (1968-11-01), Kuiper
patent: 5633199 (1997-05-01), Fiordalice et al.
Donaldson Richard L.
Dutton Brian
Hoel Carlton H.
Texas Instruments Incorporated
Valetti Mark A.
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