Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-11-25
1999-03-30
Quach, T. N.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438637, 438649, 438655, 438657, H01L 2128
Patent
active
058888950
ABSTRACT:
In order to form an ohmic contacts to both the n+ and the p+ doped regions of complementary metal oxide semiconductor substrate regions of the an integrated circuit device, wells (contact holes) are formed in the insulating using a hard mask poly-Si layer on an insulating region exposing the doped substrate regions. A TiSi.sub.x layer is formed on the walls and base of the well either by physical vapor deposition or is formed by combining a layer of poly-Si with a layer of Ti. The TiSi.sub.2 is diffused into the doped region during an annealing step. In addition, the TiSi.sub.2 layer is converted into the low resistivity C54 configuration in an annealing step.
REFERENCES:
patent: 4522845 (1985-06-01), Powell et al.
patent: 4818723 (1989-04-01), Yen
patent: 4873205 (1989-10-01), Critchlow et al.
patent: 4966868 (1990-10-01), Murali et al.
patent: 5138432 (1992-08-01), Stanasolovich et al.
patent: 5141890 (1992-08-01), Haken
patent: 5196360 (1993-03-01), Dean et al.
patent: 5210043 (1993-05-01), Hosaka
patent: 5369055 (1994-11-01), Chung
patent: 5381040 (1995-01-01), Sun et al.
patent: 5427981 (1995-06-01), Choi
patent: 5525543 (1996-06-01), Chen
patent: 5550409 (1996-08-01), Yamaguchi et al.
S. M. Sze, Physics of Semiconductor Devices, 1981 John Wiley & Sons, pp. 245-307.
M. S. Ameen et al., Characterization of Titanium Thin Films Deposited by Plasma-Enhanced Chemical Vapor Deposition, Advanced Metalization for ULSI Applications, Oct. 1994, 6 pages.
C. Arena et al., CVD of Ti and TiN: Electrical Performs as a Contact Metallurgy Oct. 4-6, 1994, Advanced Metalization for ULSI Applications, 2 pages.
Brady III W. James
Donaldson Richard L.
Garner Jacqueline J.
Quach T. N.
Texas Instruments Incorporated
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