Method for making titanium poly-silicide CMOS circuit contacts

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

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438637, 438649, 438655, 438657, H01L 2128

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058888950

ABSTRACT:
In order to form an ohmic contacts to both the n+ and the p+ doped regions of complementary metal oxide semiconductor substrate regions of the an integrated circuit device, wells (contact holes) are formed in the insulating using a hard mask poly-Si layer on an insulating region exposing the doped substrate regions. A TiSi.sub.x layer is formed on the walls and base of the well either by physical vapor deposition or is formed by combining a layer of poly-Si with a layer of Ti. The TiSi.sub.2 is diffused into the doped region during an annealing step. In addition, the TiSi.sub.2 layer is converted into the low resistivity C54 configuration in an annealing step.

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