Bit line sense amplifier driving circuit of a semiconductor memo

Static information storage and retrieval – Read/write circuit – Data refresh

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36518909, G11C 700

Patent

active

057779392

ABSTRACT:
A bit line sense amplifier driving circuit of a semiconductor memory device which has first and second refresh cycle functions includes a bit line sense amplifier driver unit for supplying a pull-up bias potential signal and a pull-down bias potential signal to a bit line sense amplifier; a bit line sense amplifier predriver unit for controlling the current flowing to the bit line sense amplifier driver unit; and a bit line sense amplifier predriver control unit for controlling the bit line sense amplifier predriver unit according to the first and second refresh cycle functions.

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patent: 5317538 (1994-05-01), Eaton, Jr.
patent: 5379400 (1995-01-01), Barakat et al.
patent: 5594695 (1997-01-01), Yim et al.
patent: 5633831 (1997-05-01), Tsukude et al.

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