Semiconductor memory trap film assembly having plural laminated

Details Semiconductor memory trap film assembly having plural laminated Semiconductor memory trap film assembly having plural laminated

1992-06-23

1994-02-15

Ngo, Ngan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257324, 257325, 257410, 257637, 257640, H01L 2968, H01L 2978, H01L 2934

Patent

active

052869946

ABSTRACT:
A trap film assembly of a semiconductor memory device includes a tunnel oxide layer formed on a semiconductor substrate and plural multi-layer film layers laminated on the tunnel oxide film. A thickness of each multi-layer film layer is sequentially increased in a direction away from the semiconductor substrate and towards a gate electrode, thereby displacing the charge centroid of the assembly towards the semiconductor substrate.

REFERENCES:
patent: 3649884 (1972-03-01), Haneta
patent: 4151537 (1979-04-01), Goldman et al.
patent: 4242737 (1980-12-01), Bate
patent: 4335391 (1982-06-01), Morris

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