Semiconductor device with composite drift region

Details Semiconductor device with composite drift region Semiconductor device with composite drift region

1997-03-17

1998-07-07

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257192, H01L 2976

Patent

active

057773637

ABSTRACT:
A power semiconductor device is shown to comprise a source region (24) and a drain region (26) disposed in a semiconductor substrate (10). A channel region (30) is disposed inwardly from a gate oxide layer (18) and a gate conductor (20). The device comprises a composite drift region (38) is formed of an n-type region (12) and a gallium arsenide region (36).

REFERENCES:
patent: 4805003 (1989-02-01), Holm et al.
patent: 4826784 (1989-05-01), Salerno et al.
patent: 4884116 (1989-11-01), Shirai
patent: 4914053 (1990-04-01), Matyi et al.
patent: 4922327 (1990-05-01), Mena et al.
patent: 4925810 (1990-05-01), Kano et al.
patent: 5086332 (1992-02-01), Nakagawa et al.
patent: 5306652 (1994-04-01), Kwon et al.
patent: 5338965 (1994-08-01), Malhi
patent: 5346835 (1994-09-01), Malhi et al.
patent: 5349207 (1994-09-01), Malhi
patent: 5350932 (1994-09-01), Malhi
patent: 5378912 (1995-01-01), Pein
patent: 5589695 (1996-12-01), Malhi

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