Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-09-28
1998-07-07
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257311, 257324, 257377, H01L 27108, H01L 2976, H01L 2994, H01L 31119
Patent
active
057773580
ABSTRACT:
A novel structure of a semiconductor memory device on a silicon substrate comprising: a first area on which stacked capacitor memory cells comprising top and bottom electrodes sandwiching a dielectric film are formed; a second area including at least a contact hole in which at least a wiring layer is formed; and a plurality of inter-layer insulators extending over both the first and second areas, wherein: the a plurality of inter-layer insulators have two different total thickness between the first and second areas so that the total thickness on the first area is larger than that on the second area to thereby sufficiently reduce an aspect ratio of the at least a contact hole on the second area for allowing the wiring layer in the contact hole to have a good step coverage as well as allowing a top inter-layer insulator to have a gentle slope with a good step coverage at a boundary between the first and second areas.
REFERENCES:
patent: 5196910 (1993-03-01), Moriuchi et al.
patent: 5406103 (1995-04-01), Ogawa
patent: 5604365 (1997-02-01), Kajigaya et al.
Fahmy Wael
NEC Corporation
Weiss Howard
LandOfFree
Stacked capacitor semiconductor memory device and method for fab does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Stacked capacitor semiconductor memory device and method for fab, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Stacked capacitor semiconductor memory device and method for fab will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1209052