Process for fabricating connection structures

Details Process for fabricating connection structures Process for fabricating connection structures

1997-10-09

1998-07-07

Quach, T. N.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438648, 438653, 438655, H01L 21283

Patent

active

057768307

ABSTRACT:
The present invention provides a process for fabricating a connection structure comprising a anti-reaction layer having excellent barrier properties and having improved ohmic characteristics with respect to the semiconductor substrate. Accordingly, the present invention comprises forming a first anti-reaction layer by temporarily ceasing the film deposition, and then initiating the film deposition again to form a second anti-reaction layer on the surface of the previously deposited first anti-reaction layer. A heat treatment can be applied to the structure after depositing a anti-reaction layer.

REFERENCES:
patent: 4990997 (1991-02-01), Nishida
patent: 5236869 (1993-08-01), Takagi et al.
patent: 5240880 (1993-08-01), Hindman et al.
patent: 5312772 (1994-05-01), Yokoyama et al.
patent: 5552341 (1996-09-01), Lee
patent: 5637533 (1997-06-01), Choi
patent: 5654233 (1997-08-01), Yu

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