Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1995-12-22
1998-07-07
Everhart, Caridad
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438737, 438738, 438613, 438687, H01L 21441
Patent
active
057768242
ABSTRACT:
A process for producing laminated film/metal structures comprising bumped circuit traces on a non-conductive substrate wherein a copper sheet/polyimide film laminate is coated with resist on the exterior surfaces. The resist adjacent the polyimide film is selectively exposed and etched to expose an area of the polyimide film. The exposed polyimide film is etched to form vias through the polyimide film to the inner side of the copper sheet. The resist adjacent the polyimide film is stripped away and a metal bump is electrolytically plated through each via onto the copper sheet. A subsequent layer of resist is electrophoretically applied over the bumps. The resist material adjacent the copper sheet is then selectively exposed and etched to expose areas of the copper sheet. The exposed copper sheet is etched to form circuit traces and the remaining resist adjacent both the polyimide film and the copper sheet is stripped away.
REFERENCES:
patent: 4878990 (1989-11-01), Dugan et al.
patent: 5231051 (1993-07-01), Baldi et al.
patent: 5250469 (1993-10-01), Tanaka et al.
patent: 5367253 (1994-11-01), Wood et al.
patent: 5529504 (1996-06-01), Greenstein et al.
Farnworth Warren M.
Hembree David R.
Everhart Caridad
Micro)n Technology, Inc.
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