Deposition of device quality, low hydrogen content, amorphous si

Details Deposition of device quality, low hydrogen content, amorphous si Deposition of device quality, low hydrogen content, amorphous si

1994-05-25

1998-07-07

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

438485, 427 99, 148DIG1, H01L 21203

Patent

active

057768196

ABSTRACT:
A method of producing hydrogenated amorphous silicon on a substrate by flowing a stream of safe (diluted to less than 1%) silane gas past a heated filament.

REFERENCES:
patent: 3014791 (1961-12-01), Benzing et al.
patent: 4237150 (1980-12-01), Wiesmann
patent: 4237151 (1980-12-01), Strongin et al.
patent: 4459163 (1984-07-01), Macdiarmid et al.
patent: 4485128 (1984-11-01), Dalal et al.
patent: 4634605 (1987-01-01), Wiesmann
patent: 4702965 (1987-10-01), Fang
patent: 4749588 (1988-06-01), Fukuda et al.
patent: 4810526 (1989-03-01), Ito et al.
patent: 4839701 (1989-06-01), Imagawa et al.
patent: 5017308 (1991-05-01), Iijima et al.
patent: 5151383 (1992-09-01), Meyerson et al.
patent: 5397737 (1995-03-01), Mahan et al.
patent: 5527629 (1996-06-01), Gastiger et al.
Mahan et al, "Deposition of Device Quality, Low H Content Amorphous Silicon", J. Appl. Phys. 69(9), 1 May 1991.
"Transition from Amorphous to Crystalline Silicon: Effect of Hydrogen on Film Growth," C.C. Tsai, et al., Material Research Society Symposium Proceedings, vol. 118, 1988.
"Microstructure of Plasma-Deposited a-Si:H Films", J.C. Knights and R.A. Lujan, Applied Physics Letters, vol. 35, No. 1, Aug. 1, 1979.
"Production of high-quality amorphous silicon films by evaporative silane surface decompositions," J. Doyle, R. Robertson, G.H. Lin, M.Z. He, and A. Gallagher, J. Appl. Phys. 64 (6) dated 15 Sep. 1988.
"Amorphous Semiconducting Silicon-Hydrogen Alloys," H. Fritzsche, C.C. Tsai, and P. Perans, Solid State Technology dated Jan. 1978.
"A Review of the Structure, Properties and Applications of Hydrogenated Amorphous Silicon," Z. Smith, 1983.
"The defect density in amorphous silicon," by M. Stutzmann, Philosophical Magazine B, 1989, vol. 60, No. 4, pp. 531-546.
"Deposition of a-Si:H by Homogeneous CVD," by B.A. Scott, R.M. Plecenik, and E.E. Simonyi, Journal de Physique, vol. C4, pp. 635-638.

Affiliated with

Also associated with

Rating

Deposition of device quality, low hydrogen content, amorphous si does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Deposition of device quality, low hydrogen content, amorphous si, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Deposition of device quality, low hydrogen content, amorphous si will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1205283