Process of fabricating semiconductor device having non-single cr

Details Process of fabricating semiconductor device having non-single cr Process of fabricating semiconductor device having non-single cr

1996-10-25

1998-07-07

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438475, 438798, H01L 2100, H01L 21322

Patent

active

057768048

ABSTRACT:
A thin film transistor formed on a non-single crystal silicon layer is exposed to hydrogen ion radiated from hydrogen plasma at 300 degrees to 400 degrees centigrade so as to deactivate trapping levels in the non-single crystal silicon layer, and, thereafter, the thin film transistor is annealed in nitrogen atmosphere at 200 degrees to 300 degrees centigrade so as to evacuate residual hydrogen from, for example, a gate insulating layer, thereby improving the transistor characteristics of the thin film transistor.

REFERENCES:
patent: 4309259 (1982-01-01), Sarma et al.
patent: 5112764 (1992-05-01), Mitra et al.
patent: 5250444 (1993-10-01), Khan
patent: 5470763 (1995-11-01), Hamada
patent: 5508227 (1996-04-01), Chan et al.
patent: 5627085 (1997-05-01), Gosain
D.P. Gosain, et al., "High Performance Bottom Gate TFT by Excimer Laser Crystallization and Post Hydrogenation," Jpn. J. Appl. Phys. Part I No. 2B vol. 34, pp. 937-941, Feb. 1995.

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