Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1996-10-15
1998-07-07
Bowers, Jr., Charles L.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438164, 438166, 438487, 438795, 438967, H01L 2184
Patent
active
057768030
ABSTRACT:
A method of manufacturing a large-area electronic device such as a flat panel display, which method includes subjecting a semiconductor film on a polymer substrate to an energy beam treatment, e.g., for crystal growth or to anneal an ion implant, and masking the substrate prior to treatment to prevent exposure to the energy beam, wherein the adhesion of the film and other layers on the substrate is improved by first heating the substrate to pre-shrink it, and then depositing the layers on the pre-shrunk substrate at a lower temperature than the heating temperature.
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English language abstract 05-326042, Patent Abstracts of Japan, vol. 18, No. 141, Japanese Patent Application Kokai JP-A-05-326402.
English language Abstract 04-33213, Patent Abstracts of Japan, vol. 17 No. 178, Japanese Patent Application Kokai JP-A-04-332134.
Bowers Jr. Charles L.
Fox John C.
Radomsky Leon
U.S. Philips Corporation
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