Process for the vapor phase synthesis of diamond and highly crys

Details Process for the vapor phase synthesis of diamond and highly crys Process for the vapor phase synthesis of diamond and highly crys

1995-03-09

1998-07-07

Lewis, Michael

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

423446, 117104, H05H 124

Patent

active

057765529

ABSTRACT:
High quality diamond excellent in crystalline property as well as transparency, can be synthesized at a high growth speed by a process which comprises using, as a raw material gas, a mixed gas of hydrogen gas A, an inert gas B, a carbon atom-containing gas C and an oxygen atom-containing inorganic gas D in such a proportion as satisfying the following relationship by mole ratio:

REFERENCES:
patent: 4434188 (1984-02-01), Kamo et al.
patent: 4767608 (1988-08-01), Matsumoto et al.
patent: 4932331 (1990-06-01), Kuihara et al.
patent: 4938940 (1990-07-01), Hirose et al.
patent: 4958590 (1990-09-01), Goforth
patent: 4981671 (1991-01-01), Miriyoshi et al.
patent: 4989542 (1991-02-01), Kamo
patent: 5087434 (1992-02-01), Frenklaub et al.
patent: 5270028 (1993-12-01), Tanabe et al.
Stenman "Width of the 1332-cm.sup.-1 Raman Line in Diamond" in Journal of Applied Physics40(10) p. 4164 Sep. 1969.

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