Semiconductor device with improved electric charge storage chara

Details Semiconductor device with improved electric charge storage chara Semiconductor device with improved electric charge storage chara

1993-09-29

1994-12-13

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257509, 257648, 257296, H01L 2992

Patent

active

053731778

ABSTRACT:
A semiconductor device such as a DRAM is provided, in which a channel stop region of a first conductive type is formed in a semiconductor substrate just below a field insulator. The channel stop region comprises a first part and a second part higher in impurity concentration than the first part. An impurity-doped region such as a source/drain region of an MOS transistor, which is of a second conductive type opposite in polarity to the first conductive type, is in contact with the first part but is not in contact with the second part in the substrate. A leakage current through a p-n junction between the channel stop region and the impurity-doped region can be reduced and as a result, reliability of operation can be improved.

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